Toshiba introduced a new generation of 256 Gb BiCS FLASH chips
Toshiba introduced a new generation of 256 Gb BiCS FLASH chips

Toshiba introduced a new generation of 256 Gb BiCS FLASH chips

Toshiba introduced a new generation of 256 Gb BiCS FLASH chips

Toshiba introduced a new generation of BiCS FLASH chips based on three-dimensional memory cells. The novelty has become the world’s first 256-gigabyte (32-gigabyte) 48-layer BiCS device and uses advanced TLC technology with three bits in each cell. Deliveries of samples will begin in September 2015. BiCS FLASH chips are created on the basis of an advanced 48-layer packaging process, which can significantly increase memory capacity, improve read and write reliability, as well as increase the speed compared to two-dimensional NAND Flash memory. The new 256-gigabit chips are suitable for a wide variety of devices – SSD drives, smartphones, tablets and memory cards, as well as corporate SSDs for data centers.

Toshiba introduced a new generation of 256 Gb BiCS FLASH chips

Toshiba announced BiCS FLASH in 2007 and has since continued to optimize technology for mass production. The Japanese manufacturer believes that next year the flash memory market will increase significantly, therefore, actively advocates the transition to BiCS FLASH. The product line of the new chips includes the most capacious models for the most demanding application areas, such as SSDs.

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